The design of high frequency input connector is especially important for the development of wide band gigahertz TEM cell(GTEM cell).The energy method in electromagnetism was used to calculate the characteristic impedance of input connector.The transition section of inner conductor was optimized by establishing and solving the exact continuous curve equations of the transitional inner conductor's two sides.The problem of deign and manufacture of high frequency input connector was discussed and the general performance of GTEM cell was analyzed.The experiment results indicate that the VSWR of the GTEM cell with such a connector is less than 1.5 during the frequency band 0.4~15 GHz.The comparison of VSWR shows that the performance of the optimized GTEM cell is better than the conventional one obviously.
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