A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes

张斌珍; 李科杰; 张文栋; 薛晨阳; 王建

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A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes

更新时间：2026-09-14

- A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes
- 基于共振隧穿压阻薄膜的GaAs基微加速度计研究
- Issue 5, Pages: 448-451(2006)
- 作者机构：
  
  1. 北京理工大学机电工程学院,北京,100081
  2. 中北大学电子测试技术国家重点实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：2006
- 稿件说明：
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张斌珍, 李科杰, 张文栋, et al. A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes[J]. 2006, (5): 448-451.
DOI：

张斌珍, 李科杰, 张文栋, et al. A GaAs Micro-Accelerometer Study Based on Resonant Tunneling Diodes[J]. 2006, (5): 448-451. DOI：

摘要

主要研究一种应用共振隧穿压阻薄膜的G aA s基4梁式微加速度计

设计出共振隧穿薄膜以及G aA s基微加速度计的结构.利用有限元软件A nsys对加速度计进行了模态仿真.讨论了加速度计的加工工艺

并完成了基于加速度计共振隧穿压阻薄膜的压阻特性研究.首次采用控制孔技术制造了G aA s基微加速度计.

Abstract

The paper reports a GaAs micro-accelerometer using resonant tunneling piezoresistive film with a quad-beam.the fabric of the resonant tunneling piezoresistive film and the GaAs micro-accelerometer has been designed

The models of the accelerometer has been performed with software-Ansys

and the fabrication has been discussed.Then the sensitivity of the meso-piezoresistance effect based on resonant tunneling piezoresistive film is studied.The GaAs micro-accelerometer has been firstly processed by control hole technology.

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