In order to explore a new electromechanical coupling technique

the GaAs/Al0.4Ga0.6As piezoresistive film was put forward and grown by molecular beam epitaxy(MBE) on a semi-insulating GaAs substrate.The GaAs-based piezoresistive accelerometer was produced with the surface micromachining process and the GaAs bulk micromachining process.At room temperature using measuring system of Raman spectrometer the measurements of the piezoresistive properties were performed by static experiments.The maximum gauge factor(GF) for the Al0.4Ga0.6As film can reach 70

which is equivalent with the GF of piezoresistance of AlN-GaN superlattice structure and can be used in micro-mechanical sensors.