and ethylene glycol monomethyl ether(EM) as solvent
the PZT was prepared.Sol PZT pyroelectric film in the Si-Pt substrate in the way of Sol-Gel was prepared by using spin coater(KW-4A)with rotation speed of 4 500 r/m and rotating time of 30 s.The PZT Sol was treated in the muffle with sintering temperature of 400 ℃ and annealing temperature of 600 ℃
650 ℃
and 700 ℃
respectively.AFM and Raman spectrum were used to investigate the morphology and the Raman peaks.The experiment showed that the Raman peaks were found when the material was treated at annealing temperatures of 600 ℃
650 ℃ and 700 ℃.The surface of the film was smooth and dense at the annealing temperature 650 ℃.The perovskite type structure of tetragonal and trigonal concomitant were formed at the annealing temperature 700 ℃.